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The fine structures in I-V curves of single-electron transistor made by double unit cells of Bi2Sr2CaCu2O8GUO, J; JIANG, J. F; CAI, Q. Y et al.Physica. C. Superconductivity and its applications. 2000, Vol 341-48, pp 1603-1604, 3Conference Paper

Preliminary exploration of nanoscale titanium dots using STMTONG, M. Z; JIANG, J. F; HUANG, P et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1999, Vol 337, pp 297-300, issn 1058-725XConference Paper

Superconductor based neuron single electron transistorJIANG, J. F; CAI, Q. Y; CHENG, Z. C et al.Physica. C. Superconductivity and its applications. 2000, Vol 341-48, pp 1607-1608, 3Conference Paper

The capacitor and the mesoscopic tunnel junction in series coupled superconducting single electron transistorCAI, Q. Y; JIANG, J. F; TONG, M. Z et al.Physica. C. Superconductivity and its applications. 2000, Vol 341-48, pp 1609-1610, 3Conference Paper

The tunneling conductance inside the unit cell of Bi2Sr2CaCu2O8GUO, J; JIANG, J. F; CAI, Q. Y et al.Physica. C. Superconductivity and its applications. 2000, Vol 341-48, pp 1551-1554, 3Conference Paper

Electromechanical single electron transistor in strong dissipative structureWANG, Y; JIANG, J. F; CAI, Q. Y et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 30, Num 1-2, pp 59-63, issn 1386-9477, 5 p.Article

A High Temperature Superconductor latchHU, C. H; JIANG, J. F; CAI, Q. Y et al.IEEE transactions on applied superconductivity. 2003, Vol 13, Num 2, pp 1060-1062, issn 1051-8223, 3 p., 1Conference Paper

The active loads based on capacitively coupled HTSC-single hole transistorSHEN, B; JIANG, J. F; CAI, Q. Y et al.IEEE transactions on applied superconductivity. 1999, Vol 9, Num 2, pp 4273-4276, issn 1051-8223, 3Conference Paper

Scanned Talbot interferometer based on fiber translation for changing written Bragg wavelengthLI, C; ZHANG, Y. M; LIU, T. G et al.LIU, T. G et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 6829, pp 68290U.1-68290U.5, issn 0277-786X, isbn 978-0-8194-7004-1 0-8194-7004-X, 1VolConference Paper

Characteristics of three-junction electromechanical single electron transistor at zero temperatureWANG, Y; JIANG, J. F; CAI, Q. Y et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 31, Num 1, pp 53-56, issn 1386-9477, 4 p.Article

Electron transport through the electromechanical quantum dots devicesWANG, Y; JIANG, J. F; CAI, Q. Y et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 31, Num 2, pp 196-199, issn 1386-9477, 4 p.Article

New FET using the superconducting phase transition of a high temperature oxide superconductorJIANG, J. F; YOSHIKAWA, N; HAN, X. Y et al.Superconductor science & technology (Print). 1991, Vol 4, Num 9, pp 468-470, issn 0953-2048Article

Nonconvex and discrete optimal design using multiple state simulated annealingLIN, C.-Y; JIANG, J.-F.Structural optimization. 1997, Vol 14, Num 2-3, pp 121-128, issn 0934-4373Article

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